| PART |
Description |
Maker |
| CGY1032 |
1 GHz - 32 dB gain GaAs push-pull amplifier
|
NXP Semiconductors
|
| HMC754S8GE |
GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz
|
Hittite Microwave Corporation
|
| S7540340 |
GaAs Push Pull Hybrid 40 - 750MHz 34.0dB min. Gain @ 750MHz 280mA max. @ 24VDC
|
http://
PREMIER DEVICES, INC.
|
| S10040280GT |
GaAs Push Pull Hybrid 40 - 1000MHz 28.0dB min. Gain @ 1000MHz 260mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| S8740280GT |
GaAs Push Pull Hybrid 40 - 870MHz 28.0dB min. Gain @ 870MHz 260mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| CGD1044HI |
1 GHz, 25 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| CGD987HCI |
1 GHz, 27 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| HMC313 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| 313E |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
美国讯泰微波有限公司上海代表
|
